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Title:
Front side improvements for n-Pasha solar cells
 
Author(s):
Janssen, G.J.M.; Koppes, M.; Komatsu, Y.; Anker, J.; Liu, J.; Gutjahr, A.; Mewe, A.A.; Tool, C.J.J.; Romijn, I.G.; Siarheyeva, O.; Ernst, M.A.; Loo, B.H.W. van de; Kessels, W.M.M.
 
Published by: Publication date:
ECN Solar Energy 22-9-2014
 
ECN report number: Document type:
ECN-M--14-047 Conference Paper
 
Number of pages: Full text:
4 Download PDF  (257kB)

Abstract:
We present a new approach to improve the efficiency of n-type solar cells by tuning the boron emitter doping profile and optimizing the surface passivation. The boron emitter profile is tuned using a new method of just etching the surface by 10-30 nm. The etching was carried out after diffusion and glass removal. This resulted in a boron emitter without boron depletion at the surface, a higher VOC by 6 mV and a higher efficiency by 0.2% absolute. To improve the surface passivation, we found that a very high implied VOC of 680±2 mV can be obtained with an improved pre-cleaning followed by a wet chemical surface oxidation and ALD Al2O3 capped with PECVD-SiNx.


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