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Title:
0.35% Absolute Efficiency Gain of Bifacial N-type Si Solar cells by Industrial Metal Wrap Through Technology
 
Author(s):
Wenchao, Zhao; Jianming, Wang; Yanlong,  Shen; Ziqian, Wang; Yingle, Chen; Hu, Zhiyan; Gaofei, Li ; Jianhui, Chen; Jingfeng, Xiong ; Guillevin, N.; Heurtault, B.; Geerligs, L.J.; Weeber, A.W.; Bultman, J.H.
 
Published by: Publication date:
ECN Solar Energy 3-6-2012
 
ECN report number: Document type:
ECN-M--12-021 Conference Paper
 
Number of pages: Full text:
3 Download PDF  (622kB)

Presented at: IEEE 38th Photovoltaic Specialists Conference (PVSC), Austin, Texas, USA, , 3-8 juni 2012.

Abstract:
N-type Metal Wrap Through (n-MWT) is presented as an industrially promising back-contact technology to reach high performance of silicon solar cells and modules. It can combine benefits from both n-type base and MWT metallization. In this paper, the integration of the MWT technique with a commercial industrial bifacial n-type Si Solar cell (239 cm2) process is described. After the integration, 0.35% absolute efficiency gain was achieved, and Voc gain and Isc gain up to 0.42% and 2.45%, respectively, were obtained, mainly attributed to reduced shadow loss and surface recombination. Based on calculations, the anticipation of further improvements for n-MWT solar cells, by taking better advantage of this integration, is also presented.


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