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Titel:
Oxidation and crystallization behavior of luminescent Eu-doped Calcium Silicon Nitride thin films during rapid thermal processing
 
Auteur(s):
Jong, de M.; Enter, V.E. van; Schuring, E.W.; Kolk, E. van der
 
Gepubliceerd door: Publicatie datum:
ECN Environment & Energy Engineering 19-5-2015
 
ECN publicatienummer: Publicatie type:
ECN-W--15-013 Artikel wetenschap tijdschrift
 
Aantal pagina's: Volledige tekst:
24 Download PDF  (953kB)

Gepubliceerd in: Thin Solid Films (Elsevier), , 2015, Vol., p.-.

Samenvatting:
Luminescent thin films were fabricated on silicon wafers using reactive magnetron sputtering of Ca, Si and Eu in Ar/N2 atmosphere. In order to activate the luminescence, the as-deposited nitride films were heated to 1100oC by a rapid thermal processing (RTP) treatment. X-ray diffraction (XRD) measurements reveal the crystal phases that form during RTP treatment. By recording scanning electron microscopy (SEM) images of the surface and the cross-section of the film at different radial locations, the formation of different layers with a thickness depending on the radial position is revealed. Energy dispersive x-ray spectroscopy (EDX) analysis of these cross-sections reveals the formation of an oxide top layer and a nitride bottom layer. The thickness of the top layer increases as a function of radial position on the substrate and the thickness of the bottom layer decreases accordingly. The observation of different 4f 65d1 ? 4f 7 Eu2+ luminescence emission bands at different radial positions correspond to divalent Eu doped Ca3Si2O4N2, Ca2SiO4 and CaSiO3, which is in agreement with the phases identified by XRD analysis. A mechanism for the observed oxidation process of the nitride films is proposed that consists of a stepwise oxidation from the as-deposited amorphous nitride state to crystalline Ca3Si2O4N2, to Ca2SiO4 and finally CaSiO3. The oxidation rate and final state of oxidation show a strong temperature-time dependency during anneal treatment.


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