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Defect transformation in intentionally contaminated FZ silicon during low temperature annealing
Habenight, H.; Gundel, P.; Mchedlidze, T.; Kittler, M.; Coletti, G.; Warta, W.
Gepubliceerd door: Publicatie datum:
ECN Zonne-energie 1-9-2008
ECN publicatienummer: Publicatie type:
ECN-M--08-010 Conferentiebijdrage
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5 Download PDF  (178kB)

Gepresenteerd op: 23rd European Photovoltaic Solar Energy Conference and Exhibition, Valencia, Spain, 1-5 september 2008.

Silicon samples intentionally contaminated with iron during growth were investigated in the as-grown state and after a prolonged low temperature anneal at around 300 C with different characterisation techniques, i.e. Deep Level Transient Spectroscopy (DLTS), Temperature Dependent Lifetime Spectroscopy (TLDS) and Photoluminescence (PL) spectroscopy. A defect transformation was found, changing the type of defect from iron-related complexes to interstitial iron.

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