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Passivating mc-Si solar cells using SiNx:H: How to tune to maximum efficiencies
Gepubliceerd door: Publicatie datum:
ECN Zonne-energie 1-10-2005
ECN publicatienummer: Publicatie type:
ECN-RX--05-109 Conferentiebijdrage
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Gepresenteerd op: 15th International Photovoltaic Science and Engineering Conference & Solar Energy Exhibition, Shanghai, China, 10-15 oktober 2005.


In this study we determine the structural properties of SiNx:H layers and relate these to both the deposition parameters and its passivating qualities for solar cells. We show that Si-N bond density is an important parameter governing both the bulk and surface passivation of the SiNx:H layers. The best bulk and surface passivating layers have a relatively low hydrogen diffusion coefficient due to a high Si-N bond density. We find optimum bulk and surface passivation for Si-N bond densities of 1.3*1023 cm-3, regardless of nitrogen containing precursor gases used and regardless of the wafer quality.

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