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Barrier layers deposited at low temperature on metal carrier foil for the use of uc-Si solar cells
Gepubliceerd door: Publicatie datum:
ECN Zonne-energie 1-10-2005
ECN publicatienummer: Publicatie type:
ECN-RX--05-107 Conferentiebijdrage
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Gepresenteerd op: 15th International Photovoltaic Science and Engineering Conference & Solar Energy Exhibition, Shanghai, China, 10-15 oktober 2005.


Barrier layer material deposited on stainless steel substrate has been under investigation. These layers are part of a film-Si module, presently under development at ECN. Low temperature (< 250°C) processing is required in order to avoid impurity diffusion from the stainless steel foil. Novel materials based on nano particles combined with organic/ inorganic polymers and SiOx precipitated from the liquid phase have been deposited onto stainless steel foil. Nano particles with organic/ inorganic polymers reveal homogenous layers with voltage breakdown values exceeding 500 V. To test the functionality of the concept, thin-film Si solar cells are planned to be prepared by VHF-PECVD in combination with the different barrier layers.

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