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Passivating mc-Si solar cells using SiNx:H: Magic or Physics
Gepubliceerd door: Publicatie datum:
ECN Zonne-energie 1-6-2005
ECN publicatienummer: Publicatie type:
ECN-RX--05-007 Conferentiebijdrage
Aantal pagina's: Volledige tekst:
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Gepresenteerd op: 20th European Photovoltaic Solar Energy Conference and Exhibition, Barcelona, Spain, 6-10 juni 2005.


Bulk passivation with SiNx:H has been so far a barely understood effect that can only be optimized for cell production in an empirical way. In this study we determine the structural properties of SiNx:H layers and relate these to both the deposition parameters and its passivating qualities for solar cells. These structural properties, such as Si-N and Si-H bond densities, of the SiNx:H layers deposited with either N2, NH3 or ND3 and silane are measured with FTIR. We show that Si-N bond density is an important parameter governing both the bulk and surface passivation of

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