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Titel:
Effects of plasma conditions on density of microcrystalline silicon
 
Auteur(s):
 
Gepubliceerd door: Publicatie datum:
ECN Zonne-energie 1-6-2004
 
ECN publicatienummer: Publicatie type:
ECN-RX--04-066 Conferentiebijdrage
 
Aantal pagina's: Volledige tekst:
4 Download PDF  (948kB)

Gepresenteerd op: 19th European Photovoltaic Solar Energy Conference and Exhibition, Paris, France, 7-11 juni 2004.

Samenvatting:

Micro-Wave PECVD with a linear plasma source is applied for deposition of intrinsic layers for mc-Si solar cells. An important advantage of the linear MW-PECVD method is the capability of large-area deposition of Si layers at high deposition rates. This makes MW-PECVD method a promising method for large-scale industrial fabrication of mc-Si and a-Si/mc-Si solar cells. A possible drawback of high deposition rate of mc-Si at low temperatures is the formation of layers with high porosity and high defect density. In this paper, the plasma geometry has been optimized to deposit more dense and less defective layers. The samples have been characteriz


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