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Silicon solar cells textured by low damage RIE with natural lithography
Gepubliceerd door: Publicatie datum:
ECN Zonne-energie 1-5-2002
ECN publicatienummer: Publicatie type:
ECN-RX--02-020 Conferentiebijdrage
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Gepresenteerd op: 29th IEEE Photovoltaic Specialists Conference, New Orleans, USA, 20-24 mei 2002.

RIE with natura1 lithography has two advantages over RIE with automasking:the process causes less surface damage and the process window is broader. We have systematically explored the parameter range of our process and identified a natura1 lithography RIE process which causes a minimum amount of surface damage. By using this RIE process and a wet chemical etch of a few nanometers, we reached a gain in shortcircuit current of 2.9% and no loss in open circuit voltage. This resulted in an absolute efficiency gain of 0.6% for the RIE textured wafers.

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