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Microwave PECVD of micro-crystalline silicon
Gepubliceerd door: Publicatie datum:
ECN Zonne-energie 1-5-2002
ECN publicatienummer: Publicatie type:
ECN-RX--02-019 Conferentiebijdrage
Aantal pagina's: Volledige tekst:
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Gepresenteerd op: 29th IEEE Photovoltaic Specialists Conference, New Orleans, USA, 20-24 mei 2002.

The deposition of micro-crystalline silicon with a new linear microwaveplasma source is investigated. Advantages of this plasma source are the high depositions rates and the large area on which a homogeneous deposition can be achieved. Since this source has not yet been applied for depositions of micro-crystalline silicon before, we explored a large parameter space in order to find optimum growth conditions. It is observed that with this microwave source it is possible to grow micro-crystalline layers at higher silane/hydrogen ratios and deposition rates than for conventional RF PECVD. In this paper, structural properties of silicon layers deposited by microwave assisted PECVD are discussed.

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