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On combining surface and bulk passivation of SiNx: H layers for mc-Si solar cells
Soppe, W.J.; Devilee, C.; Rieffe, H.C.; Schiermeier, S.E.A.; Bultman, J.H.; Weeber, A.W.; Hong, J.; Kessels, W.M.M.; Sanden, M.C.M. van de; Arnoldbik, W.M.; Schlemm, H.
Gepubliceerd door: Publicatie datum:
ECN Zonne-energie 1-5-2002
ECN publicatienummer: Publicatie type:
ECN-RX--02-018 Conferentiebijdrage
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Gepresenteerd op: 29th IEEE Photovoltaic Specialists Conference, New Orleans, USA, 20-24 mei 2002.

A route, as followed by ECN, is described for development of SiNx:Hlayers deposited by microwave (MW) PECVD, which are suited for surface and bulk passivation of mc-Si solar cells. First research was focussed on surface passivation and this resulted in the development of SiN layers that were Si-rich and where the hydrogen is mainly bonded to silicon atoms. A disadvantage of such Si-rich layers is their large absorption at shorter wavelengths, which make them unsuitable as front side AR coatings. Further, these layers appeared to be less suitable for bulk passivation. The next step therefore was the development of SiN layers for bulk passivation. For good bulk passivation of solar cells by meáns of a thermal anneal of the SiN layers, we found that SiN layers with high N-H bonding concentrations are required. Fine-tuning of the deposition conditions of these layers, frnally resulted in the development of a SiN layer type which combines the three desired properties: low absorption (good anti-reflection coating), good surface passivatlon (Seff on FZ wafers less than 50 cm/s) and good bulk passivation.

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