Gepubliceerd in: Paper, presented at the 2nd World conference and exhibition on photovoltaic solar energy conversion, Vienna, Austria, 06-10 July (), , , Vol., p.-.
A new approach for emitter diffusion in the processing scheme ofmulticrystalline silicon solar cells is presented. An IR heated belt furnace
is used to enhance the diffusion process. The diffusion time is decreased by
50% at 935C and 25% at 920C compared with a resistance heated belt furnace
which is traditionally used. Similar emitter profiles, cell performances and
internal quantum efficiencies can be obtained using an IR heated or a
conventional resistance heated belt furnace. This indicates that the material
quality of the cells as well as the electrical contact with the cell is not
affected by the diffusion process. In addition, the gas atmosphere was
varied. Changing from nitrogen, which is conventionally used, to air resulted
in comparable emitter profiles and cell characteristics. 5 refs.
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